参数资料
型号: MT46V32M16P-6T
元件分类: DRAM
英文描述: 32M X 16 DDR DRAM, 0.7 ns, PDSO66
封装: 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
文件页数: 16/82页
文件大小: 2855K
代理商: MT46V32M16P-6T
512Mb: x4, x8, x16
DDR SDRAM
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. H 7/04 EN
23
2000 Micron Technology, Inc. All rights reserved.
Figure 14: Consecutive READ Bursts
NOTE:
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal tAC, tDQSCK, and tDQSQ.
6. Example applies only when READ commands are issued to same device.
CK
CK#
COMMAND
READ
NOP
READ
NOP
ADDRESS
Bank,
Col n
Bank,
Col b
COMMAND
READ
NOP
READ
NOP
ADDRESS
Bank,
Col n
Bank,
Col b
CL = 2
CK
CK#
COMMAND
ADDRESS
DQ
DQS
CL = 2.5
DQ
DQS
DO
n
DO
b
DO
n
DO
b
T0
T1
T2
T3
T2n
T3n
T4
T5
T4n
T5n
T0
T1
T2
T3
T2n
T3n
T4
T5
T4n
T5n
DON’T CARE
TRANSITIONING DATA
COMMAND
READ
NOP
READ
NOP
ADDRESS
Bank,
Col n
Bank,
Col b
CK
CK#
COMMAND
ADDRESS
DQ
DQS
CL = 3
DO
n
DO
b
T0
T1
T2
T3
T3n
T4
T5
T4n
T5n
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