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| 型号： | MT47H64M8B6-3ELAT:D |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封装： | 10 X 10 MM, ROHS COMPLIANT, FBGA-60 |
| 文件页数： | 60/139页 |
| 文件大小： | 9398K |
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Electrical Specifications – Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions oustide those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Table 5: Absolute Maximum DC Ratings
Parameter
Symbol
Min
Max
Units
Notes
Vdd supply voltage relative to Vss
Vdd
–1.0
2.3
V
VddQ supply voltage relative to VssQ
VddQ
–0.5
2.3
V
VddL supply voltage relative to VssL
VddL
–0.5
2.3
V
Voltage on any ball relative to Vss
Vin, Vout
–0.5
2.3
V
Input leakage current; any input 0V
≤ Vin ≤ Vdd;
all other balls not under test = 0V
Ii
–5
5
A
Output leakage current; 0V
≤ Vout ≤ VddQ; DQ
and ODT disabled
Ioz
–5
5
A
Vref leakage current; Vref = valid Vref level
Ivref
–2
2
A
Notes: 1. Vdd, VddQ, and VddL must be within 300mV of each other at all times; this is not re-
quired when power is ramping down.
2. Vref
≤ 0.6 x VddQ; however, Vref may be ≥ VddQ provided that Vref ≤ 300mV.
3. Voltage on any I/O may not exceed voltage on VddQ.
Temperature and Thermal Impedance
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 28), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 29) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed in Table 7 (page 29). For designs that are expected to last several years and re-
quire the flexibility to use several DRAM die shrinks, consider using final target theta
values (rather than existing values) to account for increased thermal impedances from
the die size reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the TC specification is not exceeded. In applications where the device’s ambient temper-
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
512Mb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN
27
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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