参数资料
型号: MT47H64M8B6-3ELAT:D
元件分类: DRAM
英文描述: DDR DRAM, PBGA60
封装: 10 X 10 MM, ROHS COMPLIANT, FBGA-60
文件页数: 86/139页
文件大小: 9398K
6. TR and CP must have a minimum 500mV peak-to-peak swing.
7. Numbers in diagram reflect nominal values (VddQ = 1.8V).
512Mb: x4, x8, x16 DDR2 SDRAM
Input Electrical Characteristics and Operating Conditions
PDF: 09005aef82f1e6e2
Rev. N 1/09 EN
50
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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