- 您现在的位置：买卖IC网 > PDF目录385639 > MT49H8M32FM (Micron Technology, Inc.) REDUCED LATENCY DRAM RLDRAM PDF资料下载
参数资料
| 型号： | MT49H8M32FM |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | REDUCED LATENCY DRAM RLDRAM |
| 中文描述： | 低延迟DRAM延迟DRAM |
| 文件页数： | 19/43页 |
| 文件大小： | 652K |
| 代理商： | MT49H8M32FM |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页当前第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页
19
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
￡
T
J
￡
+110°C; +1.75V
￡
V
DD
￡
+1.85V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Clock Input Leakage Current
Input Leakage Current
Output Leakage Current
Reference Voltage Current
CONDITIONS
Matched Impedance Mode
Matched Impedance Mode
Matched Impedance Mode
Matched Impedance Mode
HSTL Strong
HSTL Strong
HSTL Strong
HSTL Strong
HSTL Weak
HSTL Weak
HSTL Weak
HSTL Weak
SYM
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
OH
V
OL
I
LC
I
LI
I
LO
I
REF
MIN
MAX
UNITS NOTES
V
V
V
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
V
REF
+ 0.15
V
SS
Q - 0.3
V
DD
Q
V
DD
Q + 0.3
V
REF
- 0.15
1, 2
1, 2
1, 3, 4
1, 3, 4
1, 2
1, 2
1, 3, 4
1, 3, 4
1, 2
1, 2
1, 3, 4
1, 3, 4
0
V
REF
+ 0.1
V
SS
Q - 0.3
V
DD
Q - 0.4
V
DD
Q + 0.3
V
REF
- 0.1
0.4
-5
-5
-5
-5
5
5
5
5
0V ￡ V
IN
￡ V
DD
Q
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
During normal operation, V
DD
Q must not exceed V
DD
. Control input signals may not have pulse widths less than
t
KHKL
(MIN) or operate at cycle rates less than
t
KHKH (MIN).
3. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.
V
IH
(AC)
￡
V
DD
+ 0.7V for t
￡
t
KHKH/2
V
IL
(AC) 3 -0.5V for t
￡
t
KHKH/2
V
IH
￡
V
DD
Q + 0.3V and V
DD
￡
1.7V and V
DD
Q
￡
1.4V for t
￡
200ms
相关PDF资料 |
PDF描述 |
|---|---|
| MT4C1M16E5DJ-6 | EDO DRAM |
| MT4LC1M16E5DJ-6S | EDO DRAM |
| MT4LC1M16E5 | EDO DRAM |
| MT4C4256 | 256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM) |
| MT4C4256L | 256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT49H8M32FM-33 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H8M32FM-33 TR | 制造商:Micron Technology Inc 功能描述:8MX32 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel |
| MT49H8M32FM-4 | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H8M32FM-4 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H8M32FM-5 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
发布紧急采购，3分钟左右您将得到回复。