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参数资料
| 型号： | MT58L128V18PF-6 |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K X 18 STANDARD SRAM, 3.5 ns, PBGA165 |
| 封装： | FBGA-165 |
| 文件页数： | 10/25页 |
| 文件大小： | 647K |
| 代理商： | MT58L128V18PF-6 |
18
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18P_2.p65 – Rev. 8/00
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, SCD SYNCBURST SRAM
Q
50
V = 1.5V
Z = 50
O
T
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
3.3V I/O AC TEST CONDITIONS
Input pulse levels ................. VIH = (VDD/2.2) + 1.5V
................... VIL = (VDD/2.2) - 1.5V
Input rise and fall times .................................... 1ns
Input timing reference levels ..................... VDD/2.2
Output reference levels ........................... VDDQ/2.2
Output load ........................... See Figures 1 and 2
LOAD DERATING CURVES
The Micron 128K x 18, 64K x 32, and 64K x 36
SyncBurst SRAM timing is dependent upon the capaci-
tive loading on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
Q
50
V = 1.25V
Z = 50
O
T
Figure 3
Q
1,538
1,667
5pF
+2.5V
Figure 4
2.5V I/O AC TEST CONDITIONS
Input pulse levels ............. VIH = (VDD/2.64) + 1.25V
............... VIL = (VDD/2.64) - 1.25V
Input rise and fall times .................................... 1ns
Input timing reference levels ................... VDD/2.64
Output reference levels .............................. VDDQ/2
Output load ........................... See Figures 3 and 4
3.3V I/O Output Load Equivalents
2.5V I/O Output Load Equivalents
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT58L128V18PT-7.5 | 制造商:Micron Technology Inc 功能描述: |
| MT58L128V32F1 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V32P1T-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V32P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128V36F1 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
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