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参数资料
| 型号： | MT58L128V18PF-6 |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K X 18 STANDARD SRAM, 3.5 ns, PBGA165 |
| 封装： | FBGA-165 |
| 文件页数： | 13/25页 |
| 文件大小： | 647K |
| 代理商： | MT58L128V18PF-6 |
20
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18P_2.p65 – Rev. 8/00
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, SCD SYNCBURST SRAM
READ TIMING
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
GW#, BWE#,
BWa#-BWd#
Q
High-Z
tKQLZ
tKQX
tKQ
ADV#
tOEHZ
tKQ
Single READ
BURST READ
tOEQ
tOELZ
tKQHZ
ADV#
suspends
burst.
Burst wraps around
to its initial state.
tAAH
tAAS
tWH
tWS
tADSH
tADSS
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A1)
Q(A2)
Q(A2 + 1)
Q(A2 + 3)
A2
A3
(NOTE 1)
Deselect
cycle.
(NOTE 3)
(NOTE 4)
Burst continued with
new base address.
DON’T CARE
UNDEFINED
NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When CE#
is HIGH, CE2# is HIGH and CE2 is LOW.
3. Timing is shown assuming that the device was not enabled before entering into this sequence. OE# does not cause Q to
be driven until after the following clock rising edge.
4. Outputs are disabled within one clock cycle after deselect.
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tAS
1.5
2.2
ns
tADSS
1.5
2.2
ns
tAAS
1.5
2.2
ns
tWS
1.5
2.2
ns
tCES
1.5
2.2
ns
tAH
0.5
ns
tADSH
0.5
ns
tAAH
0.5
ns
tWH
0.5
ns
tCEH
0.5
ns
READ TIMING PARAMETERS
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tKC
5.0
6.0
7.5
10
ns
fKF
200
166
133
100
MHz
tKH
1.6
1.7
1.9
3.2
ns
tKL
1.6
1.7
1.9
3.2
ns
tKQ
3.5
4.0
5.0
ns
tKQX
1.0
1.5
ns
tKQLZ
0
1.5
ns
tKQHZ
3.5
4.0
5.0
ns
tOEQ
3.5
4.0
5.0
ns
tOELZ
0000
ns
tOEHZ
3.0
3.5
4.0
4.5
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT58L128V18PT-7.5 | 制造商:Micron Technology Inc 功能描述: |
| MT58L128V32F1 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V32P1T-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V32P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128V36F1 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
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