参数资料
型号: MT58L128V18PF-6
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 128K X 18 STANDARD SRAM, 3.5 ns, PBGA165
封装: FBGA-165
文件页数: 6/25页
文件大小: 647K
代理商: MT58L128V18PF-6
14
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18P_2.p65 – Rev. 8/00
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, SCD SYNCBURST SRAM
NOTE: 1. All voltages referenced to VSS (GND).
2. Overshoot:
VIH
≤ +4.6V for t ≤ tKC/2 for I ≤ 20mA
Undershoot:
VIL
≥ -0.7V for t ≤ tKC/2 for I ≤ 20mA
Power-up:
VIH
≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms
3. MODE pin has an internal pull-up, and input leakage = ±10A.
4. The load used for VOH, VOL testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
than the shown DC values. AC I/O curves are available upon request.
5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together for 3.3V I/O.
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
≤ T
A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
VIHQ
1.7
VDDQ + 0.3
V
1, 2
Inputs
VIH
1.7
VDD + 0.3
V
1, 2
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
1, 2
Input Leakage Current
0V
≤ VIN ≤ VDD
ILI
-1.0
1.0
A
3
Output Leakage Current
Output(s) disabled,
ILO
-1.0
1.0
A
0V
≤ VIN ≤ VDDQ (DQx)
Output High Voltage
IOH = -2.0mA
VOH
1.7
V
1, 4
IOH = -1.0mA
VOH
2.0
V
1, 4
Output Low Voltage
IOL = 2.0mA
VOL
0.7
V
1, 4
IOL = 1.0mA
VOL
0.4
V
1, 4
Supply Voltage
VDD
3.135
3.6
V
1
Isolated Output Buffer Supply
VDDQ
2.375
2.9
V
1
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