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参数资料
| 型号： | MT58L128V36P1B-4 |
| 元件分类： | SRAM |
| 英文描述： | 128K X 36 STANDARD SRAM, 2.3 ns, PBGA119 |
| 封装： | 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119 |
| 文件页数： | 13/35页 |
| 文件大小： | 353K |
| 代理商： | MT58L128V36P1B-4 |
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20
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L256L18P1_D.p65 – Rev. 10/01
2001, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
≤ T
A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
VIHQ
1.7
VDDQ + 0.3
V
1, 2
Inputs
VIH
1.7
VDD + 0.3
V
1, 2
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
1, 2
Input Leakage Current
0V
≤ VIN ≤ VDD
ILI
-1.0
1.0
A
3
Output Leakage Current
Output(s) disabled,
ILO
-1.0
1.0
A
0V
≤ VIN ≤ VDDQ (DQx)
Output High Voltage
IOH = -2.0mA
VOH
1.7
–
V
1, 4
IOH = -1.0mA
VOH
2.0
–
V1, 4
Output Low Voltage
IOL = 2.0mA
VOL
–
0.7
V
1, 4
IOL = 1.0mA
VOL
–
0.4
V
1, 4
Supply Voltage
VDD
3.135
3.6
V
1
Isolated Output Buffer Supply
VDDQ
2.375
2.9
V
1
NOTE: 1. All voltages referenced to VSS (GND).
2. Overshoot:
VIH
≤ +4.6V for t ≤ tKC/2 for I ≤ 20mA
Undershoot:
VIL
≥ -0.7V for t ≤ tKC/2 for I ≤ 20mA
Power-up:
VIH
≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms
3. MODE has an internal pull-up, and input leakage = ±10A.
4. The load used for VOH, VOL testing is shown in Figure 4 for 2.5V I/O. AC load current is higher than the shown DC
values. AC I/O curves are available upon request.
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| MT58L512L18DT-10IT | 512K X 18 CACHE SRAM, 5 ns, PQFP100 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT58L128V36P1F-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1F-6 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L1MV18D | 制造商:MICRON 制造商全称:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM |
| MT58L1MY18D | 制造商:MICRON 制造商全称:Micron Technology 功能描述:16Mb SYNCBURST⑩ SRAM |
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