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参数资料
| 型号： | MT58L128V36P1B-4 |
| 元件分类： | SRAM |
| 英文描述： | 128K X 36 STANDARD SRAM, 2.3 ns, PBGA119 |
| 封装： | 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119 |
| 文件页数： | 15/35页 |
| 文件大小： | 353K |
| 代理商： | MT58L128V36P1B-4 |
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4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L256L18P1_D.p65 – Rev. 10/01
2001, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
NOTE: 1. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25°C, and 10ns cycle time.
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1) (0°C
≤ T
A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
S Y M TYP -4 -4.4 -5
-6 -7.5 -10 UNITS NOTES
Power Supply
Device selected; All inputs
≤ VIL
Current:
or
≥ VIH; Cycle time ≥ tKC (MIN);
IDD
225 625 575 525 475 375 300
m A
2, 3, 4
Operating
VDD = MAX; Outputs open
Power Supply
Device selected; VDD = MAX;
Current: Idle
ADSC#, ADSP#, GW#, BWx#, ADV#
≥
IDD1
55 140 130 120 110 90
85
m A
2, 3, 4
VIH; All inputs
≤ VSS + 0.2 or ≥ VDDQ - 0.2;
Cycle time
≥ tKC (MIN)
CMOS Standby
Device deselected; VDD = MAX;
All inputs
≤ VSS + 0.2 or ≥ VDDQ - 0.2;
ISB2
0.4
10
m A
3, 4
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; VDD = MAX;
All inputs
≤ VIL or ≥ VIH;ISB3
8
252525252525
m A
3, 4
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
≥
ISB4
55 140 130 120 110 90
85
m A
3, 4
VIH; All inputs
≤ VSS + 0.2 or ≥ VDDQ - 0.2;
Cycle time
≥ tKC (MIN)
MAX
相关PDF资料 |
PDF描述 |
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| MT58L512L18DS-7.5IT | 512K X 18 CACHE SRAM, 4 ns, PQFP100 |
| MT58L512L18DT-10IT | 512K X 18 CACHE SRAM, 5 ns, PQFP100 |
| MT58L512L18PB-6IT | 512K X 18 STANDARD SRAM, 3.5 ns, PBGA119 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT58L128V36P1F-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1F-6 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L1MV18D | 制造商:MICRON 制造商全称:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM |
| MT58L1MY18D | 制造商:MICRON 制造商全称:Micron Technology 功能描述:16Mb SYNCBURST⑩ SRAM |
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