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参数资料
| 型号： | MT58L128V36P1B-4 |
| 元件分类： | SRAM |
| 英文描述： | 128K X 36 STANDARD SRAM, 2.3 ns, PBGA119 |
| 封装： | 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119 |
| 文件页数： | 19/35页 |
| 文件大小： | 353K |
| 代理商： | MT58L128V36P1B-4 |
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4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L256L18P1_D.p65 – Rev. 10/01
2001, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
READ TIMING3
(READ timing parameters are contained on the following page.)
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
GW#, BWE#,
BWa#-BWd#
Q
High-Z
tKQLZ
tKQX
tKQ
ADV#
tOEHZ
tKQ
Single READ
BURST READ
tOEQ
tOELZ
tKQHZ
ADV#
suspends
burst.
Burst wraps around
to its initial state.
tAAH
tAAS
tWH
tWS
tADSH
tADSS
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A1)
Q(A2)
Q(A2 + 1)
Q(A2 + 3)
A2
A3
(NOTE 1)
Deselect
cycle.
(NOTE 3)
(NOTE 4)
Burst continued with
new base address.
DON’T CARE
UNDEFINED
NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. Timing is shown assuming that the device was not enabled before entering into this sequence. OE# does not cause Q
to be driven until after the following clock rising edge.
4. Outputs are disabled within one clock cycle after deselect.
相关PDF资料 |
PDF描述 |
|---|---|
| MT58L32L36PT-7.5 | 32K X 36 CACHE SRAM, 4.2 ns, PQFP100 |
| MT58L512L18DS-7.5IT | 512K X 18 CACHE SRAM, 4 ns, PQFP100 |
| MT58L512L18DT-10IT | 512K X 18 CACHE SRAM, 5 ns, PQFP100 |
| MT58L512L18PB-6IT | 512K X 18 STANDARD SRAM, 3.5 ns, PBGA119 |
| MT58L512L18PS-7.5IT | 512K X 18 CACHE SRAM, 4 ns, PQFP100 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT58L128V36P1F-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1F-6 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L1MV18D | 制造商:MICRON 制造商全称:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM |
| MT58L1MY18D | 制造商:MICRON 制造商全称:Micron Technology 功能描述:16Mb SYNCBURST⑩ SRAM |
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