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参数资料
| 型号： | NAND01GR3B3CZA1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| 封装： | 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63 |
| 文件页数： | 39/59页 |
| 文件大小： | 998K |
| 代理商： | NAND01GR3B3CZA1 |
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
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Table 25. AC Characteristics for Operations
Note: 1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figures 35, 36 and 37.
2. To break the sequential read cycle, E must be held High for longer than tEHEL.
3. ES = Electronic Signature.
Symbol
Alt.
Symbol
Parameter
1.8V
Devices
3V
Devices
Unit
tALLRL1
tAR
Address Latch Low to
Read Enable Low
Read Electronic Signature
Min
10
ns
tALLRL2
Read cycle
Min
10
ns
tBHRL
tRR
Ready/Busy High to Read Enable Low
Min
20
ns
tBLBH1
Ready/Busy Low to
Ready/Busy High
Read Busy time
Max
25
s
tBLBH2
tPROG
Program Busy time
Max
700
s
tBLBH3
tBERS
Erase Busy time
Max
3
ms
tBLBH4
Reset Busy time, during ready
Max
5
s
tBLBH5
tCBSY
Cache Busy time
Typ
3
s
Max
500
s
tWHBH1
tRST
Write Enable High to
Ready/Busy High
Reset Busy time, during read
Max
5
s
Reset Busy time, during program
Max
10
s
Reset Busy time, during erase
Max
500
s
tCLLRL
tCLR
Command Latch Low to Read Enable Low
Min
10
ns
tDZRL
tIR
Data Hi-Z to Read Enable Low
Min
0
ns
tEHBH
tCRY
Chip Enable High to Ready/Busy High (E intercepted read)
Max
60 + tr
(1)
60 + tr
(1)
ns
tEHEL
tCEH
Chip Enable High to Chip Enable Low(2)
Min
100
ns
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
20
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
45
ns
tRHBL
tRB
Read Enable High to Ready/Busy Low
Max
100
ns
tRHRL
tREH
Read Enable High to
Read Enable Low
Read Enable High Hold time
Min
20
ns
tRHQZ
tRHZ
Read Enable High to Output Hi-Z
Min
15
ns
Max
30
tRLRH
tRP
Read Enable Low to
Read Enable High
Read Enable Pulse Width
Min
25
ns
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read Cycle time
Min
60
50
ns
tRLQV
tREA
Read Enable Low to
Output Valid
Read Enable Access time
Max
35
ns
Read ES Access time(3)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read Busy time
Max
25
s
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
ns
tWHRL
tWHR
Write Enable High to Read Enable Low
Min
60
ns
tWLWL
tWC
Write Enable Low to
Write Enable Low
Write Cycle time
Min
60
50
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR3M0AZB5E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND01GR3M0AZB5F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND01GR3M0AZC5E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND01GR3M0AZC5F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND01GR3M0BZB5E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
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