参数资料
型号: NAND01GR3B3CZA1
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
文件页数: 46/59页
文件大小: 998K
代理商: NAND01GR3B3CZA1
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
50/59
Figure 33. Block Erase AC Waveform
Note: Address cycle 3 is required for 2Gb, 4Gb and 8Gb devices only.
Figure 34. Reset AC Waveform
D0h
60h
SR0
70h
ai08038b
tWHBL
tWLWL
tBLBH3
Block Erase
Setup Command
Block Erase
CL
E
W
AL
R
I/O
RB
Confirm
Code
Read Status Register
Block Address Input
(Erase Busy time)
(Write Cycle time)
Add.
cycle 1
Add.
cycle 3
Add.
cycle 2
W
R
I/O
RB
tBLBH4
AL
CL
FFh
ai08043
(Reset Busy time)
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NAND01GR3M0AZC5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
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