参数资料
型号: NAND01GR3B3CZA1
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
文件页数: 43/59页
文件大小: 998K
代理商: NAND01GR3B3CZA1
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
48/59
Figure 31. Page Read Operation AC Waveform
Note: A fifth address cycle is required for 2Gb, 4Gb and 8Gb devices.
tEHEL
CL
E
W
AL
R
I/O
RB
tWLWL
tWHBL
tALLRL2
00h
Data
N
Data
N+1
Data
N+2
Data
Last
tRHBL
tEHBH
tWHBH
tRLRL
tEHQZ
tRHQZ
ai08660
Busy
Command
Code
Address N Input
Data Output
from Address N to Last Byte or Word in Page
Add.N
cycle 1
Add.N
cycle 4
Add.N
cycle 3
Add.N
cycle 2
(Read Cycle time)
tRLRH
tBLBH1
30h
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NAND01GR3M0AZC5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GR3M0AZC5F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GR3M0BZB5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP