收藏本站
参数资料
型号： NAND01GR3B3CZA1
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
封装： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
文件页数： 6/59页
文件大小： 998K
代理商： NAND01GR3B3CZA1
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
14/59
SIGNAL DESCRIPTIONS
See
Figure
3., Logic
Diagram,
and
Table
3., Signal Names, for a brief overview of the sig-
nals connected to this device.
Inputs/Outputs (I/O0-I/O7). Input/Outputs 0 to 7
are used to input the selected address, output the
data during a Read operation or input a command
or data during a Write operation. The inputs are
latched on the rising edge of Write Enable. I/O0-I/
O7 are left floating when the device is deselected
or the outputs are disabled.
Inputs/Outputs (I/O8-I/O15). Input/Outputs 8 to
15 are only available in x16 devices. They are
used to output the data during a Read operation or
input data during a Write operation. Command and
Address Inputs only require I/O0 to I/O7.
The inputs are latched on the rising edge of Write
Enable. I/O8-I/O15 are left floating when the de-
vice is deselected or the outputs are disabled.
Address Latch Enable (AL). The Address Latch
Enable activates the latching of the Address inputs
in the Command Interface. When AL is high, the
inputs are latched on the rising edge of Write En-
able.
Command Latch Enable (CL). The
Command
Latch Enable activates the latching of the Com-
mand inputs in the Command Interface. When CL
is high, the inputs are latched on the rising edge of
Write Enable.
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
low, VIL, the device is selected. If Chip Enable
goes high, vIH, while the device is busy, the device
remains selected and does not go into standby
mode.
Read Enable (R). The Read Enable pin, R, con-
trols the sequential data output during Read oper-
ations. Data is valid tRLQV after the falling edge of
R. The falling edge of R also increments the inter-
nal column address counter by one.
Power-Up Read Enable, Lock/Unlock Enable
(PRL). The Power-Up Read Enable, Lock/Unlock
Enable input, PRL, is used to enable and disable
the lock mechanism, and the Automatic Page 0
Read at Power-up option. When PRL is High, VIH,
the device is in Block Lock mode and the Automat-
ic Page 0 Read at Power-Up option is enabled.
The Automatic Page 0 Read at Power-Up option is
available in 3.3V devices only.
If the Power-Up Read Enable, Lock/Unlock En-
able input is not required, the PRL pin should be
left unconnected (Not Connected) or connected to
VSS.
Write Enable (W). The Write Enable input, W,
controls writing to the Command Interface, Input
Address and Data latches. Both addresses and
data are latched on the rising edge of Write En-
able.
During power-up and power-down a recovery time
of 1s (min) is required before the Command Inter-
face is ready to accept a command. It is recom-
mended to keep Write Enable high during the
recovery time.
Write Protect (WP). The Write Protect pin is an
input that gives a hardware protection against un-
wanted program or erase operations. When Write
Protect is Low, VIL, the device does not accept any
program or erase operations.
It is recommended to keep the Write Protect pin
Low, VIL, during power-up and power-down.
Ready/Busy (RB). The Ready/Busy output, RB,
is an open-drain output that can be used to identify
if the P/E/R Controller is currently active.
When Ready/Busy is Low, VOL, a read, program or
erase operation is in progress. When the operation
completes Ready/Busy goes High, VOH.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Refer to the Ready/Busy Signal Electrical Charac-
teristics section for details on how to calculate the
value of the pull-up resistor.
VDD Supply Voltage. VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations (read,
program and erase).
An internal voltage detector disables all functions
whenever VDD is below 2.5V (for 3V devices) or
1.5V (for 1.8V devices) to protect the device from
any involuntary program/erase during power-tran-
sitions.
Each device in a system should have VDD decou-
pled with a 0.1F capacitor. The PCB track widths
should be sufficient to carry the required program
and erase currents
VSS Ground. Ground, VSS, is the reference for
the power supply. It must be connected to the sys-
tem ground.
相关PDF资料
PDF描述
NAND02GR4B2BZB1 128M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NCH030A3-FREQ-OUT27 CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT
NTHA3JAA3-FREQ-OUT27 CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT
NTHA3KC3-FREQ-OUT27 CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT
NCHA80C3-FREQ1-OUT27 CRYSTAL OSCILLATOR, CLOCK, 24 MHz - 80 MHz, HCMOS OUTPUT
相关代理商/技术参数
参数描述
NAND01GR3M0AZB5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GR3M0AZB5F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GR3M0AZC5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GR3M0AZC5F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GR3M0BZB5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*