参数资料
| 型号： | NCP5331FTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 22/36页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PWM 2PH W/DRVRS 32-LQFP |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 1 |
| 应用： | 控制器，AMD Athlon? |
| 输入电压： | 9 V ~ 14 V |
| 输出数： | 2 |
| 输出电压： | 5V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-LQFP |
| 供应商设备封装： | 32-LQFP（7x7） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP5331FTR2GOSCT |
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NCP5331
Power Dissipation
NCP5331 power dissipation may be approximated by the
following equation:
Ploss + FSW · (VCCH · QTHighFETs
) VCCLx · QTLowFETs) ) PQuiescent
where:
PQuiescent + VCCL · ICCL ) 2 · VCCLx ·ICCLx
) (VCCH ) Vin) · ICCH
F SW is the switching frequency
V CCL is 12 V
V CCLx is the low?side gate drive voltage and may be varied
between 5.0 and 12 V
V CCH is the high?side gate drive voltage and is between 4.5
and 7.0 V
V in is the input voltage to the converter and is either 5.0 or
12 V
84
81
I CCL , I CCLx , I CCH are typical device quiescent currents and
can be found under the General Electrical Specifications.
Q THighFETs is the sum of the High?Side MOSFets total gate
charge
Q TLowFETs is the sum of the Low?Side MOSFets total gate
charge
Figure 29 shows device temperature rise versus switching
frequency at various gate drive voltage combinations using
ON Semiconductor ’s NTD60N03 (Qt = 31nC at 5.0 V) as
the high?side MOSFet and NTD80N02 (Qt = 39nC at 7.0 V)
as the low?side MOSFet. Using other MOSFets will of
course result in different losses, but the general conclusion
will be the same.
If trying to drive 2 lower MOSFets at frequencies higher
than 200 KHz, it may be necessary to reduce the low?side
gate drive voltage.
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69
V CCH = 7.0 V;
V CCLx = 12 V;
2 Low?Side FETS
66
63
60
V CCH = 4.5 V;
V CCLx = 12 V;
2 Low?Side FETS
V CCH = 7.0 V;
V CCLx = 12 V;
1 Low?Side FETS
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54
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48
45
42
39
36
33
30
27
V CCH = 4.5 V;
V CCLx = 12 V;
1 Low?Side FETS
V CCH = 7.0 V;
V CCLx = 12 V;
2 Low?Side FETS
V CCH 4.5 V;
V CCLx = 12 V;
2 Low?Side FETS
24
100
150
200
250
300
350
FREQUENCY (kHz)
Figure 29. Calculated NCP5331 temperature rise (LQFP?32 package)
versus frequency at various typical gate drive voltage combinations
with typical ON Semiconductor MOSFets.
http://onsemi.com
22
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