参数资料
| 型号： | NCP5331FTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 33/36页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PWM 2PH W/DRVRS 32-LQFP |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 1 |
| 应用： | 控制器，AMD Athlon? |
| 输入电压： | 9 V ~ 14 V |
| 输出数： | 2 |
| 输出电压： | 5V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-LQFP |
| 供应商设备封装： | 32-LQFP（7x7） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP5331FTR2GOSCT |
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NCP5331
First, use Equation 15 to calculate the voltage across the
output inductor due to the 52 A load current being shared
equally between the two phases.
The rms value of the current in the control MOSFET is
calculated from Equation 20 and the previously derived
values for D, I LMAX , and I LMIN at the converter’s maximum
D VLo + VIN * VCORE,NO?LOAD
(15)
output current.
) (IO,MAX 2) @ ESROUT NOUT
+ 12 V * 1.575 V ) 52 A 2 @ 19 m W 6
+ 10.51 V
Second, use Equation 16 to determine the rate of current
increase in the output inductor when the load is applied (i.e.,
Lo has decreased to 88% due to the dc current).
IRMS,CNTL + [D @ (ILo,MAX2 ) ILo,MAX @ ILo,MIN (20)
) ILo,MIN2) 3]1 2
+ 0.097 @ [(29.62 ) 29.6 @ 22.4 ) 22.42) 3]1 2
+ 2.53 ARMS
Equation 19 is used to calculate the power dissipation of
the control MOSFET but has been modified for one upper
dILo dt + D VLo Lo
(16)
and two lower MOSFETs.
+ 10.51 V 729 nH + 14.4 V m s
PD,CONTROL + {(IRMS,CNTL2) @ RDS(on)}
(19)
Finally, use Equation 17 and Equation 18 to calculate the
minimum input inductance value.
) (ILo,MAX @ Qswitch Ig @ VIN @ fSW)
) (3 @ Qoss 2 @ VIN @ fSW) ) (VIN @ QRR @ fSW)
D VCi + ESRIN NIN @ dILo dt @ D fSW
+ 13 m W 5 @ 14.4 V m s @ 0.146 200 kHz
+ 28 mV
(17)
+ {2.532 ARMS @ 8.0 m W }
) (29.6 A @ 27 nC 1.5 A @ 12 V @ 200 kHz)
) (3 @ 12 nC 2 @ 12 V @ 200 kHz)
LiMIN + D VCi
dIIN dtMAX
(18)
) (12 V @ 43 nC @ 200 kHz)
+ 28 mV 0.50 A m s + 55 nH
Next, choose the small, cost effective T30?26 core from
Micrometals (33.5 nH/N 2 ) with #16 AWG. The design
requires only 1.28 turns to achieve the minimum inductance
value. We allow for inductance “swing” at full?load by
using three turns. The input inductor ’s value will be
+ 0.051 W ) 1.28 W ) 0.043 W ) 0.10 W
+ 1.48 W per FET
The rms value of the current in the synchronous MOSFET
is calculated from Equation 27 and the previously derived
values for D, I Lo,MAX , and I Lo,MIN at the converter ’s
maximum output current.
Li + 32 @ 33.5 nH N2 + 301 nH
IRMS,SYNCH + [(1 * D) @
(27)
This inductor is available as part number CTX15?14771
from Coiltronics.
5. MOSFET & Heatsink Selection
For the upper MOSFET we choose two (1) NTD60N03
and for the lower MOSFETs we choose two (2) NTD80N02,
both are from ON Semiconductor. The following parameters
are derived from the data sheets.
(ILo,MAX2 ) ILo,MAX @ ILo,MIN ) ILo,MIN2) 3]1 2
+ (1 * 0.097) @ [(29.62 ) 29.6 @ 22.4 ) 22.42) 3]1 2
+ 23.5 ARMS (shared by two synchronous MOSFETs)
Equation 26 is used to calculate the power dissipation of
each synchronous MOSFET. Note: The rms current is
shared by the two lower MOSFETs so the total rms current
NCP5331 Parameter
Gate Drive Current
Upper Gate Voltage
Value
1.5 A for 1.0 m s
6.5 V
is divided by two in the following equation. Also, during the
nonoverlap time, the per?phase current is shared by two
body diodes so the full load current is divided between two
phases and two forward body diodes per phase.
Lower Gate Voltage
11.5 V
PD,SYNCH + (IRMS,SYNCH2 @ RDS(on))
(26)
Gate Nonoverlap Time
65 ns
) (Vfdiode @ IO,MAX 2 @ t_nonoverlap @ fSW)
Parameter
R DS(on)
Q SWITCH
Q RR
Q OSS
V F,diode
q JC
NTD60N03
8.0 m W @ 6.5 V
27 nC
43 nC
12 nC
0.75 V @ 2.3 A
1.65 ° C/W
NTD80N02
5.0 m W @ 10 V
26 nC
36 nC
12 nC
0.92 V @ 20 A
1.65 ° C/W
+ (23.5 2)2 ARMS @ 5.0 m W
) 0.92 V @ (52 A 2 2) @ 65 ns @ 200 kHz
+ 0.69 W ) 0.16 W + 0.85 W per FET
http://onsemi.com
33
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