参数资料
型号: NT5SV8M16FT-75BI
厂商: NANYA TECHNOLOGY CORP
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: 0.400 MM, PLASTIC, TSSOP2-54
文件页数: 15/65页
文件大小: 739K
代理商: NT5SV8M16FT-75BI
NT5SV8M16FS / NT5SV8M16FT
128Mb Synchronous DRAM
REV 1.4
08/2009
22
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Burst Read Followed by the Precharge Command
Burst Write Followed by the Precharge Command
COMMAND READ Ax0
NOP
tCK2, DQs
CAS latency = 3
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT Ax0
DOUT Ax1
DOUT Ax2
DOUT Ax3
Precharge A
tRP
Bank A can be reactivated at completion of tRP.
*
(Burst Length = 4, CAS Latency = 3)
t
RP is a function of clock cycle and speed sort.
COMMAND
NOP
WRITE Ax0
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
DIN Ax0
DIN Ax1
Bank can be reactivated at completion of tRP.
*
Activate
Bank Ax
t
CK2, DQs
CAS latency = 2
tDPL
*
tRP
Precharge A
tDPL and tRP are functions of clock cycle and speed sort.
See the Clock Frequency and Latency table.
(Burst Length = 2, CAS Latency = 2)
相关PDF资料
PDF描述
NT5TU64M16DG-3C 64M X 16 DDR DRAM, 0.45 ns, PBGA84
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
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