参数资料
型号: NT5SV8M16FT-75BI
厂商: NANYA TECHNOLOGY CORP
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: 0.400 MM, PLASTIC, TSSOP2-54
文件页数: 16/65页
文件大小: 739K
代理商: NT5SV8M16FT-75BI
NT5SV8M16FS / NT5SV8M16FT
128Mb Synchronous DRAM
REV 1.4
08/2009
23
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Precharge Termination
The Precharge Command may be used to terminate either a burst read or burst write operation. When the Precharge command
is issued, the burst operation is terminated and bank precharge begins. For burst read operations, valid data will continue to
appear on the data bus as a function of CAS Latency.
Burst Read Interrupted by Precharge
COMMAND READ Ax0
NOP
tCK2, DQs
CAS latency = 2
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT Ax0
DOUT Ax1
DOUT Ax2
DOUT Ax3
Precharge A
tCK3, DQs
CAS latency = 3
DOUT Ax0
DOUT Ax1
DOUT Ax2
DOUT Ax3
tRP
*
Bank A can be reactivated at completion of tRP.
*
See the Clock Frequency and Latency table.
(Burst Length = 8, CAS Latency = 2, 3)
tRP is a function of clock cycle time and speed sort.
相关PDF资料
PDF描述
NT5TU64M16DG-3C 64M X 16 DDR DRAM, 0.45 ns, PBGA84
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
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