参数资料
型号: NTF5P03T3G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET P-CH 30V 3.7A SOT223
产品变化通告: Specification Change MSL Updated 2/April/2007
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 100 毫欧 @ 5.2A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 38nC @ 10V
输入电容 (Ciss) @ Vds: 950pF @ 25V
功率 - 最大: 1.56W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 标准包装
其它名称: NTF5P03T3GOSDKR
NTF5P03, NVF5P03
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Negative sign for P ? Channel devices omitted for clarity
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage ? Continuous
Rating
Symbol
V DSS
V DGR
V GS
Max
? 30
? 30
± 20
Unit
V
V
V
1 sq in
FR ? 4 or G ? 10 PCB
10 seconds
Minimum
FR ? 4 or G ? 10 PCB
10 seconds
Thermal Resistance ? Junction to Ambient
Total Power Dissipation @ T A = 25 ° C
Linear Derating Factor
Drain Current ? Continuous @ T A = 25 ° C
Continuous @ T A = 70 ° C
Pulsed Drain Current (Note 1)
Thermal Resistance ? Junction to Ambient
Total Power Dissipation @ T A = 25 ° C
Linear Derating Factor
Drain Current ? Continuous @ T A = 25 ° C
Continuous @ T A = 70 ° C
Pulsed Drain Current (Note 1)
R THJA
P D
I D
I D
I DM
R THJA
P D
I D
I D
I DM
40
3.13
25
? 5.2
? 4.1
? 26
80
1.56
12.5
? 3.7
? 2.9
? 19
° C/W
Watts
mW/ ° C
A
A
A
° C/W
Watts
mW/ ° C
A
A
A
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche Energy ? Starting T J = 25 ° C
(V DD = ? 30 Vdc, V GS = ? 10 Vdc, Peak I L = ? 12 Apk, L = 3.5 mH, R G = 25 W )
T J , T stg
E AS
? 55 to 150
250
° C
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
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