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| 型号： | NTF5P03T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3.7A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 5.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 25V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 其它名称： | NTF5P03T3GOSDKR |
NTF5P03, NVF5P03
PACKAGE DIMENSIONS
D
b1
SOT ? 223 (TO ? 261)
CASE 318E ? 04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
q 0 ° 1 0 ° 0 °
H E
e1
1
e
4
2
3
E
b
A
q
C
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX MIN
A 1.50 1.63 1.75 0.060
A1 0.02 0.06 0.10 0.001
b 0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c 0.24 0.29 0.35 0.009
D 6.30 6.50 6.70 0.249
E 3.30 3.50 3.70 0.130
e 2.20 2.30 2.40 0.087
e1 0.85 0.94 1.05 0.033
L 0.20 ??? ??? 0.008
L1 1.50 1.75 2.00 0.060
H E 6.70 7.00 7.30 0.264
?
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
???
0.069
0.276
?
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
???
0.078
0.287
1 0 °
0.08 (0003)
A1
L
L1
STYLE 3:
PIN 1.
2.
GATE
DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
3.
4.
SOURCE
DRAIN
2.0
0.079
1.5
0.059
2.3
0.091
2.3
0.091
SCALE 6:1
6.3
0.248
mm
inches
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NTF5P03T3/D
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