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| 型号： | NTF5P03T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3.7A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 5.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 25V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 其它名称： | NTF5P03T3GOSDKR |
NTF5P03, NVF5P03
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(V GS = 0 Vdc, I D = ? 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ? 24 Vdc, V GS = 0 Vdc)
(V DS = ? 24 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
? 30
?
?
?
?
?
? 28
?
?
?
?
?
? 1.0
? 25
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(V DS = V GS , I D = ? 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
(V GS = ? 10 Vdc, I D = ? 5.2 Adc)
(V GS = ? 4.5 Vdc, I D = ? 2.6Adc)
Forward Transconductance (Note 2)
(V DS = ? 15 Vdc, I D = ? 2.0 Adc)
V GS(th)
R DS(on)
g fs
? 1.0
?
?
2.0
? 1.75
3.5
76
107
3.9
? 3.0
?
100
150
?
Vdc
mV/ ° C
m W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = ? 25 Vdc, V GS = 0 V,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
500
153
58
950
440
140
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Gate Charge
(V DD = ? 15 Vdc, I D = ? 4.0 Adc,
V GS = ? 10 Vdc,
R G = 6.0 W ) (Note 2)
(V DD = ? 15 Vdc, I D = ? 2.0 Adc,
V GS = ? 10 Vdc,
R G = 6.0 W ) (Note 2)
(V DS = ? 24 Vdc, I D = ? 4.0 Adc,
V GS = ? 10 Vdc) (Note 2)
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q T
Q 1
?
?
?
?
?
?
?
?
?
?
10
33
38
20
16
45
23
24
15
1.6
24
48
94
92
38
110
60
80
38
?
ns
ns
nC
Q 2
Q3
?
?
3.5
2.6
?
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
(I S = ? 4.0 Adc, V GS = 0 Vdc)
(I S = ? 4.0 Adc, V GS = 0 Vdc,
T J = 125 ° C) (Note 2)
(I S = ? 4.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 2)
V SD
t rr
t a
?
?
?
?
? 1.1
? 0.89
34
20
? 1.5
?
?
?
Vdc
ns
t b
?
14
?
Reverse Recovery Stored Charge
Q RR
?
0.036
?
m C
Cpk +
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values. Max limit * Typ
3 SIGMA
http://onsemi.com
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