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参数资料
| 型号： | NTGD3149CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL 20V DUAL 6-TSOP |
| 产品变化通告： | Product Obsolescence 08/Apr/2011 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A，2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 387pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD3149C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
N
P
N
P
V GS = 0 V
I D = 250 m A
I D = ? 250 m A
20
? 20
1.1
1.1
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16 V
T J = 25 ° C
1.0
? 1.0
m A
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16 V
T J = 85 ° C
10
? 10
Gate ? to ? Source Leakage Current
I GSS
N
V DS = 0 V, V GS = ± 8 V
± 100
nA
ON CHARACTERISTICS (Note 2)
P
V DS = 0 V, V GS = ± 8 V
± 100
Gate Threshold Voltage
V GS(TH)
N
P
V GS = V DS
I D = 250 m A
I D = ? 250 m A
0.4
? 0.4
1.0
? 1.0
V
Drain ? to ? Source On Resistance
R DS(on)
N
P
N
P
N
P
V GS = 4.5 V , I D = 3.5 A
V GS = ? 4.5 V , I D = ? 2.7 A
V GS = 2.5 V , I D = 2.9 A
V GS = ? 2.5 V , I D = ? 2.4 A
V GS = 1.8 V , I D = 2.2 A
V GS = ? 1.8 V , I D = ? 1.9 A
41
83
51
104
67
143
60
110
90
145
150
220
m W
Forward Transconductance
g FS
N
V DS = 10 V , I D = 3.5 A
4.7
S
CHARGES AND CAPACITANCES
P
V DS = ? 10 V , I D = ? 2.7 A
5.1
Input Capacitance
C ISS
387
Output Capacitance
C OSS
N
V DS = 10 V
73
Reverse Transfer Capacitance
Input Capacitance
C RSS
C ISS
f = 1 MHz, V GS = 0 V
43
509
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
P
N
V DS = ? 10 V
V GS = 4.5 V, V DS = 10 V, I D = 2.0 A
R G = 6 W
76
40
4.6
0.3
0.7
5.5
Gate ? to ? Drain “Miller” Charge
Total Gate Charge
Q GD
Q G(TOT)
1.2
5.2
5.5
nC
Threshold Gate Charge
Gate ? to ? Source Gate Charge
Gate ? to ? Drain “Miller” Charge
Q G(TH)
Q GS
Q GD
P
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 1.0 A
R G = 6 W
0.4
1.0
1.2
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