- 您现在的位置：买卖IC网 > Datasheet目录488 > NTGD3149CT1G (ON Semiconductor)MOSFET COMPL 20V DUAL 6-TSOP Datasheet资料下载
参数资料
| 型号： | NTGD3149CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL 20V DUAL 6-TSOP |
| 产品变化通告： | Product Obsolescence 08/Apr/2011 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A，2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 387pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD3149C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
6.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
t d(ON)
t r
t d(OFF)
t f
N
P
V GS = 4.5 V, V DD = 10 V,
I D = 1.0 A, R G = 6.0 W
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 1.0 A, R G = 6.0 W
3.8
16.4
2.4
7.0
5.3
33.3
29.5
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
N
P
V GS = 0 V, T J = 25 ° C
I S = 0.8 A
I S = ? 0.8 A
0.7
? 0.7
1.2
? 1.2
V
Reverse Recovery Time
t RR
7.7
ns
Charge Time
Discharge Time
Reverse Recovery Charge
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
t RR
t a
t b
Q RR
N
P
V GS = 0 V, dI S / dt = 100 A/ m s
V GS = 0 V, dI S / dt = 100 A/ m s
4.5
3.2
1.9
11.4
7.5
3.9
4.7
nC
ns
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTGD3149CT1G
Package
TSOP6
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
相关PDF资料 |
PDF描述 |
|---|---|
| NTGD4161PT1G | MOSFET P-CH DUAL 30V 2.3A 6-TSOP |
| NTGD4167CT1G | MOSFET N/P-CH 30V DUAL 6-TSOP |
| NTGD4169FT1G | MOSFET N-CH 30V 2.6A 6-TSOP |
| NTGS1135PT1G | MOSFET P-CH 8V 4.6A 6-TSOP |
| NTGS3130NT1G | MOSFET N-CH SGL 20V 5.6A 6-TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGD4161P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 |
| NTGD4161P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 |
| NTGD4161PT1G | 功能描述:MOSFET PFET TSOP6 20V 2.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGD4167C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual |
| NTGD4167CT1G | 功能描述:MOSFET COMP 30V 2.9A 0.090 TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。