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参数资料
| 型号： | S29CL032J0RQAI033 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 48 ns, PQFP80 |
| 封装： | PLASTIC, MO-108CB-1, QFP-80 |
| 文件页数： | 68/79页 |
| 文件大小： | 2994K |
| 代理商： | S29CL032J0RQAI033 |
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70
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B3 March 30, 2009
Da ta
Sh e e t
19. Appendix 1
19.1
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system
can read CFI information at the addresses given in Table 19.1-Table 19.3. In order to terminate reading CFI
data, the system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Table 19.1-Table
19.3. The system must write the reset command to return the device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact a Spansion
representative for copies of these documents.
Table 19.1 CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string QRY
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 19.2 CFI System Interface String
Addresses
Data
Description
1Bh
(see description)
VCC Min. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0025h = S29CD-J devices
0030h = S29CL-J devices
1Ch
(see description)
VCC Max. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
0027h = S29CD-J devices
0036h = S29CL-J devices
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single word/doubleword program 2N s
20h
0000h
Typical timeout for Min. size buffer program 2N s (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2
N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for word/doubleword program 2N times typical
24h
0000h
Max. timeout for buffer write 2
N times typical
25h
0007h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
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