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| 型号： | SN74V263-10GGM |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| 中文描述： | 8192】18，16384】18，32768】18，65536】18的3.3V的CMOS先入先出存储器 |
| 文件页数： | 1/52页 |
| 文件大小： | 762K |
| 代理商： | SN74V263-10GGM |
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SN74V263, SN74V273, SN74V283, SN74V293
8192
×
18, 16384
×
18, 32768
×
18, 65536
×
18
3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SCAS669D – JUNE 2001 – REVISED FEBRUARY 2003
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Choice of Memory Organizations
– SN74V263 – 8192
×
18/16384
×
9
– SN74V273 – 16384
×
18/32768
×
9
– SN74V283 – 32768
×
18/65536
×
9
– SN74V293 – 65536
×
18/131072
×
9
166-MHz Operation
6-ns Read/Write Cycle Time
User-Selectable Input and Output Port Bus
Sizing
–
×
9 in to
×
9 out
–
×
9 in to
×
18 out
–
×
18 in to
×
9 out
–
×
18 in to
×
18 out
Big-Endian/Little-Endian User-Selectable
Byte Representation
5-V-Tolerant Inputs
Fixed, Low First-Word Latency
Zero-Latency Retransmit
Master Reset Clears Entire FIFO
Partial Reset Clears Data, but Retains
Programmable Settings
Empty, Full, and Half-Full Flags Signal FIFO
Status
Programmable Almost-Empty and
Almost-Full Flags; Each Flag Can Default to
One of Eight Preselected Offsets
Selectable Synchronous/Asynchronous
Timing Modes for Almost-Empty and
Almost-Full Flags
Program Programmable Flags by Either
Serial or Parallel Means
Select Standard Timing (Using EF and FF
Flags) or First-Word Fall-Through (FWFT)
Timing (Using OR and IR Flags)
Output Enable Puts Data Outputs in
High-Impedance State
Easily Expandable in Depth and Width
Independent Read and Write Clocks Permit
Reading and Writing Simultaneously
High-Performance Submicron CMOS
Technology
Glueless Interface With ’C6x DSPs
Available in 80-Pin Thin Quad Flat Pack
(TQFP) and 100-Pin Ball Grid Array (BGA)
Packages
description
The SN74V263, SN74V273, SN74V283, and SN74V293 are exceptionally deep, high-speed, CMOS first-in
first-out (FIFO) memories with clocked read and write controls and a flexible bus-matching
×
9/
×
18 data flow.
There is flexible
×
9/
×
18 bus matching on both read and write ports.
The period required by the retransmit operation is fixed and short.
The first-word data-latency period, from the time the first word is written to an empty FIFO to the time it can be
read, is fixed and short.
These FIFOs are particularly appropriate for network, video, telecommunications, data communications, and
other applications that need to buffer large amounts of data and match buses of unequal sizes.
Each FIFO has a data input port (Dn) and a data output port (Qn), both of which can assume either an 18-bit
or 9-bit width, as determined by the state of external control pins’ input width (IW) and output width (OW) during
the master-reset cycle.
The input port is controlled by write-clock (WCLK) and write-enable (WEN) inputs. Data is written into the FIFO
on every rising edge of WCLK when WEN is asserted. The output port is controlled by read-clock (RCLK) and
read-enable (REN) inputs. Data is read from the FIFO on every rising edge of RCLK when REN is asserted.
An output-enable (OE) input is provided for 3-state control of the outputs.
Copyright
2003, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
相关PDF资料 |
PDF描述 |
|---|---|
| SN74V263-15GGM | 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V263-7GGM | 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V273-10GGM | 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V273-15GGM | 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V273-6GGM | 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SN74V263-10PZA | 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V263-15GGM | 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V263-15PZA | 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V263-6GGM | 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
| SN74V263-6PZA | 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: |
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