参数资料
型号: SN74V263-10GGM
厂商: Texas Instruments, Inc.
英文描述: 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
中文描述: 8192】18,16384】18,32768】18,65536】18的3.3V的CMOS先入先出存储器
文件页数: 6/52页
文件大小: 762K
代理商: SN74V263-10GGM
SN74V263, SN74V273, SN74V283, SN74V293
8192
×
18, 16384
×
18, 32768
×
18, 65536
×
18
3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SCAS669D
JUNE 2001
REVISED FEBRUARY 2003
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Read Clock (RCLK)
Read Enable (REN)
Output Enable (OE)
Empty Flag/Output Ready (EF/OR)
Programmable Almost-Empty Flag (PAE)
Write Clock (WCLK)
SN74V263
SN74V273
SN74V283
SN74V293
Retransmit (RT)
Half-Full Flag (HF)
Interspersed/Noninterspersed Parity (IP)
(
×
9 or
×
18) Data Out (Q0
Qn)
Big Endian/Little Endian (BE)
Write Enable (WEN)
Load (LD)
(
×
9 or
×
18) Data In (D0
Dn)
Serial Enable (SEN)
First-Word Fall-Through or Serial Input
(FWFT/SI)
Full Flag/Input Ready (FF/IR)
Programmable Almost-Full Flag (PAF)
Input Width
(IW)
Output Width
(OW)
Partial Reset (PRS)
Master Reset (MRS)
Figure 1. Single-Device-Configuration Signal Flow
description (continued)
A big-endian/little-endian data word format is provided. This function is useful when data is written into the FIFO
in long-word (
×
18) format and read out of the FIFO in small-word (
×
9) format. If big-endian mode is selected,
the most significant byte (MSB) (word) of the long word written into the FIFO is read out of the FIFO first, followed
by the least significant byte (LSB). If little-endian format is selected, the LSB of the long word written into the
FIFO is read out first, followed by the MSB. The mode desired is configured during master reset by the state
of the big-endian/little-endian (BE) pin.
The interspersed/noninterspersed parity (IP) bit function allows the user to select the parity bit in the word loaded
into the parallel port (D0
Dn) when programming the flag offsets. If interspersed-parity mode is selected, the
FIFO assumes that the parity bit is located in bit position D8 during the parallel programming of the flag offsets.
If noninterspersed-parity mode is selected, D8 is assumed to be a valid bit and D16 and D17 are ignored. IP
mode is selected during master reset by the state of the IP input pin. This mode is relevant only when the input
width is set to
×
18 mode.
The SN74V263, SN74V273, SN74V283, and SN74V293 are fabricated using TI
s high-speed submicron
CMOS technology.
For more information on this device family, see the following application reports:
Interfacing TI High-Speed External FIFOs With TI DSP Via DSPs’ External Memory Interface (EMIF)
(literature number SPRA534)
Interfacing TI High-Speed External FIFOs With TI DSP Via DSPs’ Expansion Bus (XBus)
(literature number
SPRA547)
相关PDF资料
PDF描述
SN74V263-15GGM 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SN74V263-7GGM 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SN74V273-10GGM 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SN74V273-15GGM 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SN74V273-6GGM 8192 】 18, 16384 】 18, 32768 】 18, 65536 】 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
相关代理商/技术参数
参数描述
SN74V263-10PZA 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装:
SN74V263-15GGM 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装:
SN74V263-15PZA 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装:
SN74V263-6GGM 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装:
SN74V263-6PZA 功能描述:先进先出 8192 x 18 Synch 先进先出 Memory RoHS:否 制造商:IDT 电路数量: 数据总线宽度:18 bit 总线定向:Unidirectional 存储容量:4 Mbit 定时类型:Synchronous 组织:256 K x 18 最大时钟频率:100 MHz 访问时间:10 ns 电源电压-最大:3.6 V 电源电压-最小:6 V 最大工作电流:35 mA 最大工作温度:+ 85 C 封装 / 箱体:TQFP-80 封装: