参数资料
型号: W25Q80BVSSIG
厂商: Winbond Electronics
文件页数: 18/75页
文件大小: 0K
描述: IC FLASH 8MBIT 8SOIC
标准包装: 90
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 8M(1M x 8)
速度: 104MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
其它名称: Q4816329
T1015683
W25Q80BV
6.2.2
Instruction Set Table 1 (Erase, Program Instructions) (1)
INSTRUCTION NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
Write Enable
Write Enable for
Volatile Status Register
Write Disable
06h
50h
04h
Read Status Register-1
05h
(S7 – S0)
(2)
Read Status Register-2
Write Status Register
35h
01h
(S15 – S8)
S7 – S0
(2)
S15-S8
Page Program
02h
A23 – A16
A15 – A8
A7 – A0
D7 – D0
Quad Page Program
32h
A23 – A16
A15 – A8
A7 – A0
D7 – D0, …
(3)
Sector Erase (4KB)
Block Erase (32KB)
Block Erase (64KB)
20h
52h
D8h
A23 – A16
A23 – A16
A23 – A16
A15 – A8
A15 – A8
A15 – A8
A7 – A0
A7 – A0
A7 – A0
Chip Erase
Erase / Program Suspend
Erase / Program Resume
Power-down
C7h/60h
75h
7Ah
B9h
Continuous Read Mode
(4)
Reset
Notes:
FFh
FFh
1.
2.
3.
4.
Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin.
The Status Register contents will repeat continuously until /CS terminates the instruction.
Quad Page Program Input Data:
IO0 = D4, D0, ……
IO1 = D5, D1, ……
IO2 = D6, D2, ……
IO3 = D7, D3, ……
This instruction is recommended when using the Dual or Qu ad “Continuous Read Mode” feature. See section
7.2.19 & 7.2.20 for more information.
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