参数资料
型号: W25Q80BVSSIG
厂商: Winbond Electronics
文件页数: 55/75页
文件大小: 0K
描述: IC FLASH 8MBIT 8SOIC
标准包装: 90
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 8M(1M x 8)
速度: 104MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
其它名称: Q4816329
T1015683
W25Q80BV
6.2.36
Read SFDP Register (5Ah)
The W25Q80BV features a 256-Byte Serial Flash Discoverable Parameter (SFDP) register that contains
information about devices operational capability such as available commands, timing and other features.
The SFDP parameters are stored in one or more Parameter Identification (PID) tables. Currently only one
PID table is specified but more may be added in the future. The Read SFDP Register instruction is
compatible with the SFDP standard initially established in 2010 for PC and other applications. Most
Winbond SpiFlash Memories shipped after June 2010 (date code 1023 and beyond) support the SFDP
feature as specified in the applicable datasheet.
The Read SFDP instruction is initiated by driving the /CS pin low and shifting the instruction code “5Ah”
followed by a 24-bit address (A23-A0) (1) into t he DI pin. Eight “dummy” clocks are also required before the
SFDP register contents are shifted out on the falling edge of the 40 th CLK with most significant bit (MSB)
first as shown in figure 34. For SFDP register values and descriptions, please refer to the Winbond
Application Note for SFDP Definition table.
Note: 1. A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-Byte SFDP Register.
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
CLK
Mode 0
Instruction (5Ah)
24-Bit Address
DI
(IO 0 )
23
*
22
21
3
2
1
0
DO
(IO 1 )
/CS
High Impedance
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
CLK
Dummy Byte
DI
(IO 0 )
0
7
6
5
4
3
2
1
0
Data Out 1
Data Out 2
DO
(IO 1 )
*
= MSB
High Impedance
7
*
6
5
4
3
2
1
0
7
*
6
5
4
3
2
1
0
7
Figure 34. Read SFDP Register Instruction Sequence Diagram
Publication Release Date: October 09, 2013
- 55 -
Revision I
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