参数资料
型号: W25Q80BVSSIG
厂商: Winbond Electronics
文件页数: 47/75页
文件大小: 0K
描述: IC FLASH 8MBIT 8SOIC
标准包装: 90
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 8M(1M x 8)
速度: 104MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
其它名称: Q4816329
T1015683
W25Q80BV
6.2.29
Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of t DP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
tDP
Mode 3
0
1
2
3
4
5
6
7
Mode 3
CLK
Mode 0
Mode 0
Instruction (B9h)
DI
(IO 0 )
Stand-by current
Power-down current
Figure 27. Deep Power-down Instruction Sequence Diagram
Publication Release Date: October 09, 2013
- 47 -
Revision I
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W25Q80BVSSIG/REELS 制造商:Winbond Electronics Corp 功能描述:
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W25Q80BVSSIP 制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVZPAG 制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI