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参数资料
| 型号： | BR25S128GUZ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 13/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SPI 128KB 12-WLCSP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 12-XFBGA，CSPBGA |
| 供应商设备封装： | VCSP35L2 |
| 包装： | 标准包装 |
| 其它名称： | BR25S128GUZ-WE2DKR |
BR25S128GUZ-W
● Command mode
Command
(128K)
Contents
Ope code
Datasheet
WREN
WRDI
READ
WRITE
RDSR
WRSR
Write enable command
Write disable command
Read command
Write command
Read status register command
Write status register command
0000
0000
0000
0000
0000
0000
0110
0100
0011
0010
0101
0001
● Timing chart
1. Write enable (WREN) / disable (WRDI) command
CSB
WREN (WRITE ENABLE): Write enable
CSB
WRDI (WRITE DISABLE): Write disable
SCK
SI
0
0
0
1
0
2
0
3
0
4
1
5
1
6
0
7
SCK
SI
0
0
0
1
0
2
0
3
0
4
1
5
0
6
0
7
SO
High-Z
Figure 30. Write enable command
SO
High-Z
Figure 31. Write disable command
This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it
is set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the
respective ope codes. The respective commands are accepted at the 7-th clock rise. Even with input over 7 clocks,
command becomes valid.
When to carry out write command, it is necessary to set write enable status by the write enable command. If write
command is input in the write disable status, the command is cancelled. And even in the write enable status, once write
command is executed, it gets in the write disable status. After power on, this IC is in write disable status.
2. Read command (READ)
CSB
～～
～～
～～
SCK
0
1
2
3
4
5
6
7
8
9
10
11
23
24
～～
30
31
～～
SI
0
0
0
0
0
0
1
1
*
*
A13 A12
～～
A1
A0
～～
～～
SO
High-Z
～～
D7
D6
～～
D2
D1
D0
Figure 32. Read command
By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read ope
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 23-th clock, and from
D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of
SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data of
the most significant address, by continuing increment read, data of the most insignificant address is read.
www.rohm.com
?2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
13/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001
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| BR25S128-W | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series Serial EEPROMs |
| BR25S256FJ-WE2 | 功能描述:IC EEPROM SPI 256KB 20MHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
| BR25S256F-WE2 | 功能描述:IC EEPROM SPI 256KB 20MHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
| BR25S256-W | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series Serial EEPROMs |
| BR25S320FJ-WE2 | 功能描述:IC EEPROM SPI 32KB 20MHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
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