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| 型号： | BR25S128GUZ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 17/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SPI 128KB 12-WLCSP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 12-XFBGA，CSPBGA |
| 供应商设备封装： | VCSP35L2 |
| 包装： | 标准包装 |
| 其它名称： | BR25S128GUZ-WE2DKR |
BR25S128GUZ-W
(128K)
Datasheet
● I/O peripheral circuits
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
○ Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller VOL,
IOL with considering VIL characteristics of this IC.
1. Pull up resistance
R PU ≧
V CC － V OLM
I OLM
???①
Microcontroller
I OLM
R PU
EEPROM
V OLM ≦
V ILE
???②
V OLM
“L” output
V ILE
“L” input
Example) When Vcc=5V, V ILE =1.5V, V OLM =0.4V, I OLM =2mA,
from the equation ① ,
5 － 0.4
Figure 42. Pull up resistance
R PU ≧
∴ R PU ≧
2×10 -3
2.3[k Ω ]
With the value of Rpu to satisfy the above equation, V OLM
becomes 0.4V or lower, and with V ILE (=1.5V), the equation ② is
also satisfied.
? V ILE :EEPROM V IL specifications
? V OLM :Microcontroller V OL specifications
? I OLM :Microcontroller I OL specifications
And, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up.
2.Pull down resistance
Microcontroller
V OHM
EEPROM
V IHE
R PD ≧
V OHM ≧
V OHM
I OHM
V IHE
???③
???④
“H” output
I OHM
R PD
“H” input
Example) When V CC =5V, V OHM =V CC -0.5V, I OHM ＝ 0.4mA,
V IHE =V CC ×0.7V, from the equation ③ ,
0.4×10
Figure 43. Pull down resistance
R PD ≧
∴ R PD ≧
5 － 0.5
-3
11.3[k Ω ]
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting Vcc/GND level
amplitude of signal, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8V CC / 0.2Vcc
is input, operation speed becomes slow.
*1
In order to realize more stable high speed operation, it is recommended to make the values of R PU , R PD as large as possible,
and make the amplitude of signal input to EEPROM close to the amplitude of V CC / GND level.
( ★ 1 In this case, guaranteed value of operating timing is guaranteed.)
www.rohm.com
?2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
17/23
TSZ02201-0R2R0G100310-1-2
19.Jul.2012 Rev.001
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相关代理商/技术参数 |
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|---|---|
| BR25S128-W | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series Serial EEPROMs |
| BR25S256FJ-WE2 | 功能描述:IC EEPROM SPI 256KB 20MHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
| BR25S256F-WE2 | 功能描述:IC EEPROM SPI 256KB 20MHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
| BR25S256-W | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series Serial EEPROMs |
| BR25S320FJ-WE2 | 功能描述:IC EEPROM SPI 32KB 20MHZ 8-SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
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