- 您现在的位置：买卖IC网 > PDF目录295374 > CY7C1248KV18-400BZXC (CYPRESS SEMICONDUCTOR CORP) 2M X 18 DDR SRAM, 0.45 ns, PBGA165 PDF资料下载
参数资料
| 型号： | CY7C1248KV18-400BZXC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 2M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件页数： | 4/28页 |
| 文件大小： | 907K |
| 代理商： | CY7C1248KV18-400BZXC |
第1页第2页第3页当前第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页
CY7C1246KV18, CY7C1257KV18
CY7C1248KV18, CY7C1250KV18
Document Number: 001-57834 Rev. *B
Page 12 of 28
Write Cycle Descriptions
The write cycle description table for CY7C1257KV18 follows.[10, 11]
BWS0
K
Comments
L
L–H
–
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
–
L–H
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
H
L–H
–
No data is written into the device during this portion of a write operation.
H
–
L–H
No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1250KV18 follows.[10, 11]
BWS0 BWS1 BWS2 BWS3
K
Comments
LLLL
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
LLLL
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
H
L–H
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L
H
–
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
H
L
H
L–H
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
–
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
H
L
H
L–H
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
H
–
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
H
L
L–H
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
H
L
–
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
HHHH
L–H
–
No data is written into the device during this portion of a write operation.
HHHH
–
L–H No data is written into the device during this portion of a write operation.
Notes
10. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW,
represents rising edge.
11. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on
different portions of a write cycle, as long as the setup and hold requirements are achieved.
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C1371AV25-66AC | 512K X 36 ZBT SRAM, 10 ns, PQFP100 |
| CY7C1387DV25-225BZI | 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 |
| CY7C1387DV25-225BZC | 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 |
| CY7C138AV | Memory |
| CY7C025-15JC | x16 Dual-Port SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C1248KV18-450BZXC | 功能描述:静态随机存取存储器 36MB (2Mx18) 1.8v 450MHz DDR II 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C12501KV | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C12501KV18-400BZC | 功能描述:静态随机存取存储器 1Mb x 36 400 MHz Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C12501KV18-400BZXC | 功能描述:静态随机存取存储器 1Mb x 36 400 MHz Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C12501KV18-450BZXC | 功能描述:IC SRAM 36MBIT 450MHZ 165-FPBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
发布紧急采购，3分钟左右您将得到回复。