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参数资料
| 型号： | E28F200B5B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | DIRECTIONAL COUPLER, 20DB, SMT |
| 中文描述： | 256K X 8 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 22/44页 |
| 文件大小： | 345K |
| 代理商： | E28F200B5B60 |
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E
28F200B5, 28F004/400B5, 28F800B5
29
PRELIMINARY
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, T = +25 °C. These currents are valid for all
product versions (packages and speeds).
2. ICCES is specified with the device deselected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Block erases and word/byte program operations are inhibited when VPP = VPPLK, and not guaranteed in the range between
VPPH1 and VPPLK.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR to less than 1 mA typical, in static operation.
6. CMOS Inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
5.5
DC Characteristics—Automotive Temperature
Sym
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
IIL
Input Load Current
1
± 5.0
A
VCC = VCCMax
VIN = VCC or GND
ILO
Output Leakage Current
1
± 10
A
VCC = VCC Max
VIN = VCC or GND
ICCS
VCC Standby Current
1,3
0.8
2.5
mA
TTL
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
Inputs = VIL or VIH
2, 4 Mbit
70
250
A
CMOS
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
Inputs = VIL or VIH
8 Mbit
70
220
A
ICCD
VCC Deep
Power-Down
Current
2, 4 Mbit
1
0.2
105
A
VCC = VCC Max
VIN = VCC or GND
RP# = GND ± 0.2 V
8 Mbit
1
0.2
104.5
A
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相关代理商/技术参数 |
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| E28F200B5B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
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| E28F200B5T80 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
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| E28F200BL-T150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
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