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参数资料
| 型号： | E28F200B5B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | DIRECTIONAL COUPLER, 20DB, SMT |
| 中文描述： | 256K X 8 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 41/44页 |
| 文件大小： | 345K |
| 代理商： | E28F200B5B60 |
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28F200B5, 28F004/400B5, 28F800B5
E
6
PRELIMINARY
SmartVoltage
technology
enables
fast
factory
programming and low-power designs. Specifically
designed for 5 V systems, 5 Volt Boot Block Flash
components support read operations at 5 V VCC
and internally configure to program/erase at 5 V or
12 V. The 12 V VPP option renders the fastest
program and erase performance which will increase
your factory throughput. With the 5 V VPP option,
VCC and VPP can be tied together for a simple 5 V
design. In addition, the dedicated VPP pin gives
complete data protection when VPP
≤ VPPLK.
The memory array is asymmetrically divided into
blocks
in
an
asymmetrical
architecture
to
accommodate microprocessors that boot from the
top (denoted by -T suffix) or the bottom (-B suffix)
of
the
memory
map.
The
blocks
include
a
hardware-lockable boot block (16,384 bytes), two
parameter blocks (8,192 bytes each) and main
blocks (one block of 98,304 bytes and additional
block(s) of 131,072 bytes). See Figures 4–7 for
memory maps. Each block can be independently
erased
and
programmed
100,000
times
at
commercial
temperature
or
10,000
times
at
extended temperature. At automotive temperature,
each parameter block can be independently erased
and programmed 30,000 times, and each main and
boot block 1,000 times. Unlike erase operations,
which
erase
all
locations
within
a
block
simultaneously, each byte or word in the flash
memory can be programmed independently of other
memory locations.
The
hardware-lockable
boot
block
provides
complete code security for the kernel code required
for system initialization. Locking and unlocking of
the boot block is controlled by WP# and/or RP#
(see Section 3.3 for details).
The system processor interfaces to the flash device
through a Command User Interface (CUI), using
valid
command
sequences
to
initiate
device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for program and erase operations. The
Status Register (SR) indicates the status of the
WSM and whether it successfully completed the
desired program or erase operation.
The Automatic
Power
Savings
(APS)
feature
substantially reduces active current when the
device is in static mode (addresses not switching).
In APS mode, the typical ICCR current is 1 mA.
When CE# and RP# pins
are at
VCC, the
component enters a CMOS standby mode. Driving
RP# to GND enables a deep power-down mode
which significantly reduces power consumption,
provides write protection, resets the device, and
clears the status register. A reset time (tPHQV) is
required from RP# switching high until outputs are
valid. Likewise, the device has a wake time (tPHEL)
from
RP#-high
until
writes
to
the
CUI
are
recognized. See Section 4.2.
The deep power-down mode can also be used as a
device reset, allowing the flash to be reset along
with the rest of the system. For example, when the
flash memory powers-up, it automatically defaults
to the read array mode, but during a warm system
reset, where power continues uninterrupted to the
system components, the flash memory
could
remain in a non-read mode, such as erase.
Consequently, the system Reset signal should be
tied to RP# to reset the memory to normal read
mode upon activation of the Reset signal. This also
provides protection against unwanted command
writes due to invalid system bus conditions during
system reset or power-up/down sequences.
These devices are configurable at power-up for
either byte-wide or word-wide input/output using the
BYTE# pin. Please see Table 2 for a detailed
description of BYTE# operations, especially the
usage of the DQ15/A–1 pin.
These 5 Volt Boot Block Flash memory products
are available in the 44-lead PSOP (Plastic Small
Outline
Package),
which
is
ROM/EPROM-
compatible, and the 48-lead TSOP (Thin Small
Outline Package, 1.2 mm thick) as shown in
Figure 1, and 2, respectively.
2.0
PRODUCT DESCRIPTION
This
section describes
the pinout
and
block
architecture of the device family.
2.1
Pin Descriptions
The pin descriptions table details the usage of each
of the device pins.
相关PDF资料 |
PDF描述 |
|---|---|
| E28F200BX-B120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-B60 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-B80 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F002BX-T120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200B5B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| E28F200B5T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| E28F200B5T80 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| E28F200BL-B150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BL-T150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
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