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参数资料
| 型号： | E28F200B5B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | DIRECTIONAL COUPLER, 20DB, SMT |
| 中文描述： | 256K X 8 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 6/44页 |
| 文件大小： | 345K |
| 代理商： | E28F200B5B60 |
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28F200B5, 28F004/400B5, 28F800B5
E
14
PRELIMINARY
3.1.2
OUTPUT DISABLE
With OE# at a logic-high level (VIH), the device
outputs are disabled. Output pins (if available on
the device) DQ0–DQ15 are placed in a high-
impedance state.
3.1.3
STANDBY
Deselecting the device by bringing CE# to a logic-
high level (VIH) places the device in standby mode
which
substantially
reduces
device
power
consumption. In standby, outputs DQ0–DQ15 are
placed in a high-impedance state independent of
OE#. If deselected during program
or erase
operation, the device continues functioning and
consuming
active
power
until
the
operation
completes.
3.1.4
WORD/BYTE CONFIGURATION
The 16-bit devices can be configured for either an
8-bit or 16-bit bus width by setting the BYTE# pin
before power-up. This is not applicable to the 8-bit
only E28F004B5.
When BYTE# is set to logic low, the byte-wide
mode
is
enabled,
where
data
is
read
and
programmed on DQ0–DQ7 and DQ15/A–1 becomes
the lowest order address that decodes between the
upper and lower byte. DQ8–DQ14 are tri-stated
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode
is enabled, and data is read and programmed on
DQ0–DQ15.
3.1.5
DEEP POWER-DOWN/RESET
RP# at VIL initiates the deep power-down mode,
also referred to as reset mode.
From read mode, RP# going low for time tPLPH
deselects the memory, places output drivers in a
high-impedance state, and turns off all internal
circuits. After return from power-down, a time tPHQV
is required until the initial memory access outputs
are valid. A delay (tPHWL or tPHEL) is required after
return from power-down before a write can be
initiated.
After
this
wake-up
interval,
normal
operation is restored. The CUI resets to read array
mode, and the status register is set to 80H. This
case is shown in Figure 14A.
If RP# is taken low for time tPLPH during a program
or erase operation, the operation will be aborted
and the memory contents at the aborted location
(for a program) or block (for an erase) are no longer
valid, since the data may be partially erased or
written. The abort process goes through the
following sequence: When RP# goes low, the
device shuts down the operation in progress, a
process which takes time tPLRH to complete. After
this time tPLRH, the part will either reset to read
array mode (if RP# has gone high during tPLRH,
Figure 14B) or enter deep power-down mode (if
RP# is still logic low after tPLRH, Figure 14C). In
both
cases,
after
returning
from
an
aborted
operation, the relevant time tPHQV or tPHWL/tPHEL
must be waited before a read or write operation is
initiated, as discussed in the previous paragraph.
However, in this case, these delays are referenced
to the end of tPLRH rather than when RP# goes high.
As with any automated device, it is important to
assert RP# during system reset. When the system
comes out of reset, processor expects to read from
the flash memory. Automated flash memories
provide
status
information
when
read
during
program or block erase operations. If a CPU reset
occurs with no flash memory reset, proper CPU
initialization may not occur because the flash
memory
may
be
providing
status
information
instead of array data. Intel Flash memories allow
proper CPU initialization following a system reset
through the use of the RP# input. In this application,
RP# is controlled by the same RESET# signal that
resets the system CPU.
3.1.6
WRITE
The CUI does not occupy an addressable memory
location. Instead, commands are written into the
CUI using standard microprocessor write timings
when WE# and CE# are low, OE# = VIH, and the
proper address and data (command) are presented.
The address and data for a command are latched
on the rising edge of WE# or CE#, whichever goes
high first. Figure 16 illustrates a write operation.
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相关代理商/技术参数 |
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| E28F200B5B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| E28F200B5T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| E28F200B5T80 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| E28F200BL-B150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BL-T150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
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