参数资料
型号: EM6640SO18B
英文描述: Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; Temperature Range: -40°C to 85°C; Package: 10-DFN
中文描述: 微控制器
文件页数: 30/62页
文件大小: 620K
代理商: EM6640SO18B
EM6640
03/02 REV. C/446
Copyright
2002, EM Microelectronic-Marin SA
36
www.emmicroelectronic.com
9. EEPROM
The EM6640’s EEPROM contains 32 words of 8 bits each. Addressing is done indirectly using 5 bits (32
addresses) defined in RegEEPAddr and RegEEPCntl registers.
Either in erase/write mode or in read mode, the EEPROM will be functional for all the standard operating
conditions. Refer to EM6640 Electrical specifications, on page 55.
In RegEEPCntl register, one can select EEPROM reading or writing operation by setting respectively to “0“ or “1“
the bit EEPRdWr.
How to read data from EEPROM :
1st instr.
: write EEPROM address (4 low bits) in RegEEPAddr register.
2nd instr.
: write the high address bit and select reading operation in RegEEPCntl register.
3rd instr.
: read EEPROM low data in RegEEPDataL register.
4th instr.
: read EEPROM high data in RegEEPDataH register.
The two last instructions can be executed in the reverse order.
How to write data in EEPROM :
1st instr.
: write EEPROM address (4 low bits) in RegEEPAddr register.
2nd instr.
: write EEPROM low data in RegEEPDataL register.
3rd instr.
: write EEPROM high data in RegEEPDataH register.
4th instr.
: write the high address bit and select writing operation in RegEEPCntl register.
The three first instructions can be executed in any order.
Writing to the RegEEPCntl register automatically starts the EEPROM reading or writing operation according to
the bit EEPRdWr. To guarantee correct functionality when the EEPROM is being used, one should never modify
the EEPROM’s registers.
EEPROM reading operation lasts 10s : then, data are available in RegEEPDataL and RegEEPDataH registers.
The flag EEPRdBusy in RegEEPCntl register stays high until the reading operation is finished.
EEPROM writing operation lasts 20200s : 10000s for erase process, 10000s for effective write process and
200s between these two processes. The flag EEPWrBusy in RegEEPCntl register stays high until the writing
operation is finished. An interrupt request IRQEEP is generated at the end of each writing operation. This interrupt
request can be masked (default, MaskIRQEEP bit). See also the interrupt handling section 10 for further
information.
During reading operation, the device will drawn an additional 60
A of Ivdd current and during erasing/writing
operation an additional 45
A of Ivdd current (typical, @ 3V, 600kHz, 25°C).
N.B. : During a EEPROM writing operation, all the peripherals of the EM6640 can be used but one
should never put the circuit in SLEEP mode or execute a RESET.
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