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| 型号： | EM6640SO18B |
| 英文描述： | Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; Temperature Range: -40°C to 85°C; Package: 10-DFN |
| 中文描述： | 微控制器 |
| 文件页数： | 51/62页 |
| 文件大小： | 620K |
| 代理商： | EM6640SO18B |
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EM6640
03/02 REV. C/446
Copyright
2002, EM Microelectronic-Marin SA
55
www.emmicroelectronic.com
18. EM6640 Electrical specifications
All electrical specifications written in this section are related to a typical system clock of 600 kHz.
18.1
Absolute maximum ratings
Min.
Max.
Unit
Power supply VDD-VSS
- 0.2
+ 5.7
V
Input voltage
VSS - 0,2
VDD+0,2
V
Storage temperature
- 40
+ 125
°C
Electrostatic discharge to
Mil-Std-883C Method 3015.7 with ref. to VSS
-2000
+2000
V
Maximum soldering conditions
10s x 250
°C
Stresses above these listed maximum ratings may cause permanent damage to the device.
Exposure beyond specified electrical characteristics may affect device reliability or cause malfunction.
18.2 Handling Procedures
This device has built-in protection against high static voltages or electric fields ; however, anti-static precautions
should be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply
voltage range.
18.3 Standard Operating Conditions
Parameter
Min.
Typ.
Max.
Unit
Description
Temperature
-30
25
85
°C
VDD
1.9
3
5.5
V
VSS
0
V
Reference terminal
CVreg (note 1)
0.22
1
F
regulated voltage capacitor
fq
600
kHz
nominal frequency
Note 1:
This capacitor filters switching noise from VDD to keep it away from the internal logic cells.
In noisy systems or if using the MSWBdataLevel metal option, the capacitor should be chosen bigger
than the typical value.
18.3.1
DC characteristics - Power Supply Pins
Conditions: VDD=3V, T=25°C, f=600kHz (unless otherwise specified)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
ACTIVE Supply Current
IVDDa
42
A
(note 1)
-30 ... 85°C
IVDDa
55
A
STANDBY Supply Current
IVDDh
8
A
(in Halt mode)
-30 ... 85°C
IVDDh
12
A
SLEEP Supply Current
IVDDs
0.3
A
(SLEEP = 1)
-30 ... 85°C
IVDDs
0.4
A
POR static level
25°C
VPOR
1.5
V
Regulated voltage
CVreg, no load
Vreg
1.85
V
-30 ... 85°C,CVreg, no load
Vreg
1.75
2.1
V
RAM data retention
Vrd
1.5
V
Note 1:
For test reasons at EM, the user has to provide a test loop with successive writing and reading of two
different addresses (5 instructions should be reserved for this measurement).
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