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参数资料
| 型号： | FDH038AN08A1 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 80A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.8 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 160nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8665pF @ 25V |
| 功率 - 最大： | 450W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
Typical Characteristics T C = 25°C unless otherwise noted
2000
1000
100
10 μ s
100 μ s
1ms
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
DC
10ms
10
1
0.1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1 10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
STARTING T J = 150 o C
0.1 1 10
t AV , TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
120
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V DD = 15V
175 o C
T J =
160
120
V GS = 10V
V GS = 6V
V GS = 7V
V GS = 5V
80
T J = 25 o C
T J = -55 o C
80
40
0
40
0
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3.0
3.5
4.0 4.5 5.0
V GS , GATE TO SOURCE VOLTAGE (V)
5.5
6.0
0
0.5 1.0
V DS , DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
6
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
5
4
3
V GS = 6V
V GS = 10V
2.0
1.5
1.0
2
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0.5
V GS = 10V, I D = 80A
0
2 0
40
I D , DRAIN CURRENT (A)
60
80
-80
-40
0 40 80 120
T J , JUNCTION TEMPERATURE ( o C)
160
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 2003 Fairchild Semiconductor Corporation
FDH038AN08A1 Rev. C2
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDH038AN08A1_Q | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH040C48/BK | 制造商:Thomas & Betts 功能描述:HAZFLDH3,400W,M.H.,480V,BALST KIT |
| FDH047AN08A0 | 功能描述:MOSFET N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH055N15A | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDH1000 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:High Conductance Switching Diodes |
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