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参数资料
| 型号： | FDM3622 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 4.4A POWER33 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 17/March/2008 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 4.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1090pF @ 25V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-Power33（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDM3622DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
I DSS
I GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
V DS = 80V, V GS = 0V
T J = 100°C
V GS = ±20V, V DS = 0V
100
1
250
±100
V
μ A
nA
On Characteristics
V GS(th)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
4
V
V GS = 10V, I D = 4.4A
44
60
r DS(on)
Static Drain to Source On Resistance
V GS = 6.0V, I D = 3.8A
56
80
m Ω
Dynamic Characteristics
V GS = 10V, I D = 4.4A , T J = 150°C
92
120
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1MHz
820
125
35
1090
170
55
pF
pF
pF
Rg
Gate Resistance
V DS = 15mV, f = 1MHz
0.1
3.1
6.2
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 50V, I D = 4.4A
V GS = 10V, R GEN = 24 Ω
V GS = 10V
V DD = 50V
I D = 4.4A
11
25
35
26
13
3.6
3.4
20
40
56
42
17
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 4.4A
V GS = 0V, I S = 2.2A
I F = 4.4A, di/dt = 100A/ μ s
1.25
1.0
56
108
V
V
ns
nC
Notes:
1: R θ JA is determined with the device mounted on a 1 in 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is determined by the
user's board design.
(a)R θ JA = 60°C/W when mounted on a 1 in 2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)R θ JA = 135°C/W when mounted on a minimum pad of 2 oz copper.
a. 60°C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3: E AS of 54 mJ is based on starting T J = 25 C; N-ch: L = 3 mH, I AS = 6 A, V DD = 100 V, V GS = 10 V.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
FDM3622 Rev.C4
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDM3622_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 100V, 4.4A, 60mヘ |
| FDM3622_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 4.4A, 60m?? |
| FDM40 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC |
| FDM40M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC |
| FDM450 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC |
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