参数资料
| 型号： | ISL6322IRZ |
| 厂商： | Intersil |
| 文件页数： | 33/41页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM 4PHASE BUCK 48-QFN |
| 标准包装： | 43 |
| 应用： | 控制器，Intel VR10、VR11、AMD CPU |
| 输入电压： | 5 V ~ 12 V |
| 输出数： | 1 |
| 输出电压： | 0.38 V ~ 1.99 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-VFQFN 裸露焊盘 |
| 供应商设备封装： | 48-QFN（7x7） |
| 包装： | 管件 |
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ISL6322
PVCC
BOOT
D
Inductor DCR Current Sensing Component
Selection
R HI1
R LO1
UGATE
G
R G1
C GD
R GI1
C GS
C DS
Q1
The ISL6322 senses each individual channel’s inductor
current by detecting the voltage across the output inductor
DCR of that channel (as described in “Continuous Current
network is required to accurately sense the inductor DCR
voltage and convert this information into a current, which is
PHASE
S
proportional to the total output current. The time constant of
this R-C network must match the time constant of the
inductor L/DCR.
FIGURE 19. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
V IN
I
L
UGATE(n)
PVCC
MOSFET
L
DCR
V OUT
R HI2
R LO2
LGATE
G
R G2
C GD
R GI2
D
C DS
DRIVER
LGATE(n)
INDUCTOR
V L (s)
V C (s)
R 1
C 1
C OUT
C GS
S
Q2
ISL6322 INTERNAL CIRCUIT
R 2*
FIGURE 20. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
The total gate drive power losses are dissipated among the
I n
SAMPLE
resistive components along the transition path and in the
bootstrap diode. The portion of the total power dissipated in
the controller itself is the power dissipated in the upper drive
path resistance, P DR_UP , the lower drive path resistance,
P DR_UP , and in the boot strap diode, P BOOT .
I SEN
+
-
V C (s)
R ISEN
ISEN-(n)
ISEN+(n)
*R 2 is OPTIONAL
P BOOT = ---------------------
P DR_UP = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI1 + R EXT1 R LO1 + R EXT1 ?
P DR_LOW = ? ? ? ---------------------
? R HI2 + R EXT2 R LO2 + R EXT2 ?
P DR = P DR_UP + P DR_LOW + P BOOT + ( I Q ? VCC )
P Qg_Q1
3
? R HI1 R LO1 ? P Qg_Q1
3
? R HI2 R LO2 ? P Qg_Q2
-------------------------------------- + ----------------------------------------
2
(EQ. 31)
FIGURE 21. DCR SENSING CONFIGURATION
The R-C network across the inductor also sets the
overcurrent trip threshold for the regulator. Before the R-C
components can be selected, the desired overcurrent
protection level should be chosen. The minimum overcurrent
trip threshold the controller can support is dictated by the
DCR of the inductors and the number of active channels. To
calculate the minimum overcurrent trip level, I OCP,min , use
R EXT1 = R G1 + -------------
N
R EXT2 = R G2 + -------------
N
I OCP , min = ---------------------------
R GI1
Q1
R GI2
Q2
Equation 32, where N is the number of active channels, and
DCR is the individual inductor ’s DCR.
0.0375 ? N (EQ. 32)
DCR
The rest of the power will be dissipated by the external gate
resistors (R G1 and R G2 ) and the internal gate resistors
(R GI1 and R GI2 ) of the MOSFETs. Figures 19 and 20 show
the typical upper and lower gate drives turn-on transition
path. The total power dissipation in the controller itself, P DR ,
can be roughly estimated with Equation 31.
33
The overcurrent trip level of the ISL6322 cannot be set any
lower then the I OCP,min level calculated above. If the
minimum overcurrent trip level is desired, do the
following steps to choose the component values for the
R-C current sensing network:
1. Choose an arbitrary value for C 1 . The recommended
value is 0.1μF.
FN6328.2
August 2, 2007
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