参数资料
| 型号： | ISL8121IRZ |
| 厂商： | Intersil |
| 文件页数： | 22/26页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 24-QFN |
| 标准包装： | 75 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 2MHz |
| 占空比： | 66% |
| 电源电压： | 4.9 V ~ 5.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-VFQFN 裸露焊盘 |
| 包装： | 管件 |
ISL8121
+12V IN
L IN
+5V IN
(C F1 )
VCC
(C F2 )
PVCC
C BIN1
(C HFIN1 )
REFTRK
BOOT1
C BOOT1
R FS
FS
SS
C SS
UG1
PHASE1
ISEN1 R
ISEN1
Q1
Q2
L OUT1
LOCATE NEAR LOAD
(MINIMIZE CONNECTION PATH)
VMON
LG1
BOOT2
V OUT
R EN
R PG
PGD
EN
ISL8121
UG2
C BOOT2
Q3
C BIN2
(C HFIN2 )
C BOUT
(C HFOUT )
C 2
R 2
COMP
C 1
PHASE2
ISEN2 R
LG2
ISEN2
Q4
L OUT2
R S
PGND
FB
R P
R 1
VDIFF VSEN+ VSEN-
LOCATE CLOSE TO IC
(MINIMIZE CONNECTION PATH)
GND
LOCATE NEAR SWITCHING TRANSISTORS
(MINIMIZE CONNECTION PATH)
KEY
HEAVY TRACE ON CIRCUIT PLANE LAYER
ISLAND ON POWER PLANE LAYER
ISLAND ON CIRCUIT PLANE LAYER
VIA CONNECTION TO GROUND PLANE
FIGURE 26. PRINTED CIRCUIT BOARD POWER PLANES AND ISLANDS
Component Selection Guidelines
MOSFETS
The selection of MOSFETs revolves closely around the
current each MOSFET is required to conduct, the
switching characteristics, the capability of the devices to
dissipate heat, as well as the characteristics of available
heat sinking. Since the ISL8121 drives the MOSFETs
with a 5V signal, the selection of appropriate MOSFETs
should be done by comparing and evaluating their
characteristics at this specific V GS bias voltage. The
following paragraphs addressing MOSFET power
dissipation ignore the driving losses associated with the
gate resistance.
22
The aggressive design of the shoot-through protection
circuits, part of the ISL8121 output drivers, is geared
toward reducing the deadtime between the conduction
of the upper and the lower MOSFET/s. The short
deadtimes, coupled with strong pull-up and pull-down
output devices driving the UG and LG pins make the
ISL8121 best suited to driving low gate resistance (R G ),
late-generation MOSFETs. If employing MOSFETs with a
nominal gate resistance in excess of 1 Ω to 2 Ω , check for
the circuit’s proper operation. A few examples (non
exclusive list) of suitable MOSFETs to be used in
ISL8121 applications include the D8 (and later)
generation from Renesas and the OptiMOS?2 line from
Infineon. Along the same line, the use of gate resistors
is discouraged, as they may interfere with the circuits
just mentioned.
FN6352.2
October 27, 2009
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL8121IRZ-T | 功能描述:IC REG CTRLR BUCK PWM VM 24-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL8121IRZ-TR5453 | 制造商:Intersil Corporation 功能描述:STD. ISL8121IRZ-T WITH GOLD BOND WIRE ONLY - Tape and Reel |
| ISL8126 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual/n-Phase Buck PWM Controller with Integrated Drivers |
| ISL8126CRZ | 功能描述:IC REG CTRLR BUCK PWM VM 32-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
| ISL8126CRZ-T | 功能描述:IC REG CTRLR BUCK PWM VM 32-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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