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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 10/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
3
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCER
collector-emitter voltage
LBE2003S
RBE = 220
35
V
LBE2009S
RBE = 100
35
V
VCEO
collector-emitter voltage
open base
16
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
LBE2003S
90
mA
LBE2009S
250
mA
Ptot
total power dissipation
Tmb ≤ 75 °C
LBE2003S
1.4
W
LBE2009S
3.5
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
at 0.3 mm from case; t = 10 s
235
°C
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 220 .
(3) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR; LBE2003S.
handbook, halfpage
102
10
IC
(mA)
1
(1)
(2)
(3)
MGD996
10
VCE (V)
15
20
30
40
60
100
Fig.3
Power dissipation derating as a function of
mounting-base temperature; LBE2003S.
handbook, halfpage
50
0
200
2
1.5
0.5
0
1
50
100
150
MGD989
Tmb (
oC)
Ptot
(W)
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