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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 9/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
2
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
FEATURES
Diffused emitter ballasting resistors
Self-aligned process entirely ion implanted and gold
metallization
Optimum temperature profile
Excellent performance and reliability.
APPLICATIONS
Common emitter class-A linear power amplifiers up
to 4 GHz.
DESCRIPTION
The LBE2003S and LBE2009S are NPN silicon planar
epitaxial microwave power transistors in a SOT441A metal
ceramic studless package.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Fig.1 Simplified outline and symbol (SOT441A).
Marking code: LBE2003S = 407; LBE2009S = 409.
handbook, halfpage
e
c
b
MAM329
Top view
1
4
3
2
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common emitter class-A amplier.
TYPE NUMBER
MODE OF
OPERATION
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(mW)
Gpo
(dB)
Zi
(
)
ZL
(
)
LBE2003S
Class-A (CW) linear
2
18
30
≥200
≥10
6.2 + j30
17.5 + j7
LBE2009S
Class-A (CW) linear
2
18
110
≥700
≥9
7.5 + j15
17.5 + j39
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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