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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 4/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
12
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
PACKAGE OUTLINE
UNIT
A
max.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
2.4
SOT441A
97-02-28
b
L
D
3.38
3.08
b
3.2
b1
0.75
c
0.125
Q
α
1.3
1.0
D1
5.28
5.12
6
L
min.
90
°
0
5
10 mm
scale
Q
A
seating plane
D
D1
c
1
4
3
2
Studless ceramic package; 4 leads
SOT441A
L
b1
DIMENSIONS (mm are the original dimensions)
Note
1. This device corporates naked beryllium oxide, the dust of witch is toxic.
α
AI2O3
BeO
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