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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 15/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
8
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
APPLICATION INFORMATION
Microwave performance for LBE2003S up to Tmb =25 °C in a common emitter class-A test circuit; note 1.
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. IC and VCE regulated.
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
MODE OF OPERATION
f
(GHz)
VCE
(V) (2)
IC
(mA) (2)
PL1
(mW) (3)
Gpo
(dB) (4)
Zi
(
)
ZL
(
)
Class-A (CW)
2
18
30
≥200 (23)
typ. 250 (24)
≥10
typ. 11
6.2 + j30
17.5 + j7
Fig.6 Prematching test circuit board for 2 GHz.
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (
εr = 2.54); thickness: 0.8 mm.
handbook, full pagewidth
C
MCD635
input
output
C
10.5
2
3
2.5
2
12.5
621
3
2 2
66.5
12.5
7
10.5
14.5
2
0.5
1.2
1
6
3.5
5
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