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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 2/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
10
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
Microwave performance for LBE2009S up to Tmb =75 °C in a common emitter class-A test circuit; note 1.
Notes
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
2. IC and VCE regulated.
3. Load power for 1 dB compressed power gain.
4. Low level power gain associated with PL1.
MODE OF OPERATION
f
(GHz)
VCE
(V) (2)
IC
(mA) (2)
PL1
(mW) (3)
Gpo
(dB) (4)
Zi
(
)
ZL
(
)
Class-A (CW)
2
18
110
≥700 (28.5)
typ. 900 (29.5)
≥9
typ. 9.8
7.5 + j14.5
17.5 + j38.5
Fig.9 Prematching test circuit board for 2 GHz.
Dimensions in mm.
Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (
εr = 2.54); thickness: 0.8 mm.
handbook, full pagewidth
,,,,,,,
12.4
26.4
1.2
13
25
MGD999
2
6.8
5.2
0.8
2
input
VSWR
< 3.5
Zo = 50
output
VSWR
< 3
Zo = 50
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