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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 5/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
13
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specication
This data sheet contains target or goal specications for product development.
Preliminary specication
This data sheet contains preliminary data; supplementary data may be published later.
Product specication
This data sheet contains nal product specications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specication
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specication.
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