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| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 11/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
4
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
Fig.4
DC SOAR; LBE2009S.
handbook, halfpage
103
102
10
1
MGD990
10
20
40
IC
(mA)
102
(1)
(2)
(3)
VCE (V)
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 100 .
(3) Second breakdown limit (independant of temperature).
Fig.5
Power dissipation derating as a function of
mounting-base temperature; LBE2009S.
handbook, halfpage
50
0
P tot
(W)
200
Tmb (
oC)
4
3
1
0
2
50
100
150
MGD991
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
Tj =75 °C
LBE2003S
65
K/W
LBE2009S
36
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
Tj =75 °C
1.5
K/W
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