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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 12/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
5
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 20 V; IE =0
0.1
A
ICBO
collector cut-off current
VCB = 40 V; IE =0
LBE2003S
150
A
LBE2009S
250
A
ICER
collector cut-off current
LBE2003S
VCB = 35 V; RBE = 220
500
A
LBE2009S
VCB = 35 V; RBE = 100
1000
A
IEBO
emitter cut-off current
VEB = 1.5 V; IC =0
LBE2003S
0.05
A
LBE2009S
0.2
A
hFE
DC current gain
VCE =5V; IC =30mA
15
150
VCE =5V; IC = 110 mA
15
150
Ccb
collector-base capacitance
VCB = 18 V; VEB = 1.5 V;
IE =IC = 0; f = 1 MHz
LBE2003S
0.3
pF
LBE2009S
0.6
pF
Cce
collector-emitter capacitance
VCE = 18 V; VEB = 1.5 V;
IE =IC = 0; f = 1 MHz
LBE2003S
0.45
pF
LBE2009S
0.6
pF
Ceb
emitter-base capacitance
VCB = 10 V; VEB =1V;
IE =IC = 0; f = 1 MHz
LBE2003S
1.7
pF
LBE2009S
3.3
pF
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