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参数资料
| 型号： | LBE2009S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC, SOT-441A, 4 PIN |
| 文件页数： | 16/16页 |
| 文件大小： | 78K |
| 代理商： | LBE2009S |
1998 Feb 16
9
Philips Semiconductors
Product specication
NPN microwave power transistors
LBE2003S; LBE2009S
Fig.7 Load power as a function of input power.
f = 2 GHz; Tmb =25 °C.
VCE = 18 V; IC =30mA.
(1) Gpo =11dB.
handbook, halfpage
0
typ
10
30
300
0
100
200
20
MGD992
PL
(mW)
Pi (mW)
(1)
PL1
Fig.8
s12 as a function of collector current.
handbook, halfpage
0
IC (mA)
20
40
80
10
0
60
5
typ
MGD993
S12
(dB)
Class-A operation.
f = 2 GHz; Tmb =25 °C; VCE =18V.
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